After 11 years of partnership, Sandisk and Toshiba's timing could not have been better. Just seven days after losing the NAND crown to Intel and Micron (IMFT) they announce they will have 19nm NAND samples rolling off their fabs as we speak. This one upmanship is normal for this industry but the announcement coming so soon after IMFT's 20nm announcement was a surprise to many. Like IMFT, they expect to start mass production during the second half of this year, and finding homes for their latest NAND in the next wave of tablets, smartphones and SSDs.
Toshiba NAND on display on the Kingston SSDNow V+100
Anand and I had the opportunity to speak with representatives from Toshiba and SanDisk who sounded quite optimistic about the competitiveness of their 19nm products. Like IMFT, they expect to see similar endurance as their 24nm products, around 3,000 program/erase cycles. This is owing to ever improving ECC and wear leveling algorithms, ensuring as few wasted p/e cycles as possible. SanDisk and Toshiba did not publish die size for this iteration, but did state a decrease of approximately 25%. Previously, their 24nm die size was published as 151mm2, so this iteration should bring that down to about 113mm2, besting IMFT's 118mm2 at 20nm. Page and block sizes remain at their 24nm levels of 8 KB per page and 256 pages per block.
Read on for our analysis of the SanDisk-Toshiba 19nm announcement!
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